型号:

IRF6607

RoHS:
制造商:International Rectifier描述:MOSFET N-CH 30V 27A DIRECTFET
详细参数
数值
产品分类 分离式半导体产品 >> FET - 单
IRF6607 PDF
其它有关文件 DirectFET MOSFET 4Ps Checklist
产品变化通告 (EP) Parts Discontinuation 25/May/2012
产品目录绘图 IR Hexfet Circuit
DirectFET
标准包装 1
系列 HEXFET®
FET 型 MOSFET N 通道,金属氧化物
FET 特点 逻辑电平门
漏极至源极电压(Vdss) 30V
电流 - 连续漏极(Id) @ 25° C 27A
开态Rds(最大)@ Id, Vgs @ 25° C 3.3 毫欧 @ 25A,10V
Id 时的 Vgs(th)(最大) 2V @ 250µA
闸电荷(Qg) @ Vgs 75nC @ 4.5V
输入电容 (Ciss) @ Vds 6930pF @ 15V
功率 - 最大 3.6W
安装类型 表面贴装
封装/外壳 DirectFET? 等容 MT
供应商设备封装 DIRECTFET? MT
包装 剪切带 (CT)
产品目录页面 1524 (CN2011-ZH PDF)
其它名称 *IRF6607
IRF6607CT
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